NextPower 100 V, 18 m廓 N-channel MOSFET in TO220package

文件：265.41 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Vierpol-Funk-Entst철rkondensatoren Four-pole Radio Interference Suppression

文件：75.16 Kbytes 页数：1 Pages

EICHHOFF

NextPower 100 V, 18 m廓 N-channel MOSFET in I2PAKpackage

文件：256.339 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 53A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：285.17 Kbytes 页数：2 Pages

ISC

无锡固电