PSMN013-40VLD中文资料安世数据手册PDF规格书

1. General description

Dual, standard level N-channel MOSFET in an LFPAK56D package (halfbridge

configuration), using NextpowerS3 technology.

An internal connection is made between the source (S1) of the high-side

FET to the drain (D2) of the low-side FET, making the device ideal to use

as a half-bridge switch in high-performance PWM and space constrained

motor drive applications

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D1

S1, D2

S2

G1

G2

2. Features and benefits

• LFPAK56D package with half-bridge configuration enables:

• Reduced PCB layout complexity

• Module shrinkage through reduced component count

• Improved system level Rth(j-amb) due to optimized package design

• Lower parasitic inductance to support higher efficiency

• Footprint compatibility with LFPAK56D Dual package

• NextpowerS3 technology

• Low power losses, high power density

• Superior avalanche performance

• Repetitive avalanche rated

• LFPAK copper clip packaging provides high robustness and reliability

• Gull wing leads support high manufacturability and Automated Optical Inspection (AOI)

3. Applications

• Handheld power tools, portable appliance and space constrained applications

• Brushless or brushed DC motor drive

• DC-to-DC systems

• LED lighting