PSII30-06规格书库存现货威世科技POWERSEM-114ic电子网

首页 >PSII30-06>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
PSII30-06	文件：512.77 Kbytes Page：4 Pages	IGBT Module	POWERSEM Powersem GmbH,	POWERSEM
30-06-A	文件：77.81 Kbytes Page：1 Pages	HERMETICALLYSEALEDCRYSTALCANRELAY	OENINDIA OEN India Limited	OENINDIA
30-06-D	文件：77.81 Kbytes Page：1 Pages	HERMETICALLYSEALEDCRYSTALCANRELAY	OENINDIA OEN India Limited	OENINDIA
30-06-E	文件：77.81 Kbytes Page：1 Pages	HERMETICALLYSEALEDCRYSTALCANRELAY	OENINDIA OEN India Limited	OENINDIA
30-06-G	文件：77.81 Kbytes Page：1 Pages	HERMETICALLYSEALEDCRYSTALCANRELAY	OENINDIA OEN India Limited	OENINDIA
30-06-L	文件：77.81 Kbytes Page：1 Pages	HERMETICALLYSEALEDCRYSTALCANRELAY	OENINDIA OEN India Limited	OENINDIA
DSEC30-06	文件：50.08 Kbytes Page：2 Pages	HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 Applications •Antiparalleldiodeforhighfrequencyswitchingdevices •	IXYS IXYS Integrated Circuits Division	IXYS
DSEC30-06A	文件：39.52 Kbytes Page：2 Pages	HiPerFREDEpitaxialDiodewithcommoncathodeandsoftrecovery Features ●Internationalstandardpackage ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehaviour ●EpoxymeetsUL94V-0 Applications ●Antiparalleldiodeforhighfrequencyswitchingdevices ●	IXYS IXYS Integrated Circuits Division	IXYS
DSEC30-06B	文件：50.08 Kbytes Page：2 Pages	HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 Applications •Antiparalleldiodeforhighfrequencyswitchingdevices •	IXYS IXYS Integrated Circuits Division	IXYS
DSEC30-06B	文件：134.62 Kbytes Page：5 Pages	HighPerformanceFastRecoveryDiodeLowLossandSoftRecoveryCommonCathode HiPerFRED LowLossandSoftRecoveryHighPerformanceFastRecoveryDiodeCommonCathode Features/Advantages: ●Planarpassivatedchips ●Verylowleakagecurrent ●Veryshortrecoverytime ●Improvedthermalbehaviour ●VerylowIrm-values ●Verysoftrecoverybehaviour ●Avalanchevol	IXYS IXYS Integrated Circuits Division	IXYS
DSEI30-06A	文件：79.55 Kbytes Page：2 Pages	FastRecoveryEpitaxialDiode(FRED) Features ●InternationalstandardpackageJEDECTO-247AD ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehavior ●EpoxymeetsUL94V-0 ●VersionARisolatedandULregisteredE153432 Applications ●Antiparalleldio	IXYS IXYS Integrated Circuits Division	IXYS
DSEI30-06A	文件：364.17 Kbytes Page：2 Pages	UltrafastRectifier FEATURES ·Guardingforovervoltageprotection ·Dualrectifierconstruction,positivecentertap ·Metalofsiliconrectifier,majoritycarrierconduction ·Lowforwardvoltage,highefficiency ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Uni	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
DSEP30-06A	文件：388.59 Kbytes Page：2 Pages	UltrafastRectifier	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
DSEP30-06A	文件：68.01 Kbytes Page：3 Pages	HiPerFREDEpitaxialDiodewithsoftrecovery Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr	IXYS IXYS Integrated Circuits Division	IXYS
DSEP30-06B	文件：68.01 Kbytes Page：3 Pages	HiPerFREDEpitaxialDiodewithsoftrecovery Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr	IXYS IXYS Integrated Circuits Division	IXYS
DSEP30-06BR	文件：68.01 Kbytes Page：3 Pages	HiPerFREDEpitaxialDiodewithsoftrecovery Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr	IXYS IXYS Integrated Circuits Division	IXYS
DSEP30-06BR	文件：237.79 Kbytes Page：2 Pages	UltrafastRecoveryDiode FEATURES ·Ultrafastrecoverytime ·Lowforwardvoltage,highefficiency ·100avalanchetested APPLICATIONS ·Switchingpowersupply ·Powerswitchingcircuits	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
DSEP30-06CR	文件：21.91 Kbytes Page：1 Pages	HiPerDynFREDTMEpitaxialDiodewithsoftrecovery(ElectricallyIsolatedBackSurface) Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowcathodetotabcapacitance(	IXYS IXYS Integrated Circuits Division	IXYS
FE30-06	文件：129.199 Kbytes Page：2 Pages	3AFASTEFFICIENTRECTIFIER	FRONTIER Frontier Electronics	FRONTIER
FE30-06	文件：103.02 Kbytes Page：1 Pages	3AFASTEFFICIENTRECTIFIER	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI

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详细参数

型号：
PSII30-06
制造商：
POWERSEM
制造商全称：
POWERSEM
功能描述：
IGBT Module

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市安富世纪电子有限公司	PSII9022ACNU	LATTICE	21+	QFN	50000	全新原装正品现货,支持订货	询价
深圳市威雅利发展有限公司	PSII9022ACNU	LATTICE	1146	QFN	63	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市德创芯微科技有限公司	PSII9022ACNU	LATTICE	1146	QFN	63	只做原装,也只有原装!	询价
深圳市晨豪科技有限公司	PSII9022ACNU	SILICON	23+	SOP	89630	当天发货全新原装现货	询价
贸泽芯城（深圳）电子科技有限公司	PSII9334CTU	SILICONIMAGE			8043500	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市纳立科技有限公司	PSIL0W5DC5S3V3S4		三年内		1983	纳立只做原装正品13590203865	询价
深圳市锐视安科技有限公司	PSIM1WDC5S24VS7	PNS	13+	DIP	1000	全新原装进口,拒绝假货,真实库存/特价出货	询价
深圳市科思奇电子科技有限公司	PSIM1WDC5S24VS7	PNS	20+	DIP	6000	支持实单/原盒/原包/原标/进口原装	询价
深圳市盈盛科创科技有限公司	PSIM1WDC5S24VS7	PNS	22+	DIP	3000	进口原装假一罚十现货	询价
深圳市诚中源科技有限公司	PSIM1WDC5S24VS7	PNS	21+	DIP	9866		询价

更多PSII30-06供应商更新时间2024-5-7 13:00:00

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