650 V, 20 A SiC Schottky diode in D2PAK R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic p

文件：281.47 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

650 V, 20 A SiC Schottky diode in TO247 R2P applications

General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package offers tempe

文件：247.16 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

85 at 30cm at Rated voltage

文件：88.15 Kbytes 页数：1 Pages

MSPI

马洛里

Resonant Frequency (Hz) 6500 짹 500

文件：87.36 Kbytes 页数：1 Pages

MSPI

马洛里