丝印：PSC0665H；Package：DPAK；650 V, 6 A SiC Schottky diode in DPAK R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic pa

文件：255.9 Kbytes 页数：10 Pages

NEXPERIA

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1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. The product

文件：233.91 Kbytes 页数：9 Pages

NEXPERIA

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