SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS

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PMI

Narrow Acceptance High Sensitivity Phototransistor

■ Features 1. Epoxy resin package 2. Narrow acceptance (∆ θ : Typ. ± 13˚ ) 3. High sensitivity ( IC : MIN. 1.5mA at E e = 0.1mW/cm 2) : PT481/PT483F1 ( IC : MIN. 0.9mA at E e = 0.1mW/cm 2) : PT481F 4. Visible light cut-off type : PT481F/PT483F1 ■ Applications 1. VCRs, cassette tape

文件：66.71 Kbytes 页数：4 Pages

SHARPSharp Corporation

夏普

Narrow Acceptance High Sensitivity Phototransistor

■ Features 1. Epoxy resin package 2. Narrow acceptance (∆ θ : Typ. ± 13˚ ) 3. High sensitivity ( IC : MIN. 1.5mA at E e = 0.1mW/cm 2) : PT481/PT483F1 ( IC : MIN. 0.9mA at E e = 0.1mW/cm 2) : PT481F 4. Visible light cut-off type : PT481F/PT483F1 ■ Applications 1. VCRs, cassette tape

文件：66.71 Kbytes 页数：4 Pages

SHARPSharp Corporation

夏普

Schottky Barrier Diode

Schottky Barrier Diode Features 1) Compact size. 2) High reliability. 3) Extremely low forward voltage. 4) This is a composite component and is ideal for reducing the number of components used. Applications Low current rectification Construction Silicon epitaxial p

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ROHM

罗姆