FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES High current capability Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound 2.0 ampere operation at TA =55 ¢J with no thermal runaway

文件：54.6 Kbytes 页数：2 Pages

PANJIT

強茂

FAST SWITCHING PLASTIC RECTIFIER

文件：44.4 Kbytes 页数：2 Pages

PANJIT

強茂

FAST SWITCHING PLASTIC RECTIFIER

文件：67.12 Kbytes 页数：2 Pages

PANJIT

強茂

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

文件：36.34 Kbytes 页数：2 Pages

POLYFET

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

文件：222.06 Kbytes 页数：3 Pages

MOSPEC

统懋

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switching for high efficiency. • In

文件：66.28 Kbytes 页数：2 Pages

PANJIT

強茂