High voltage power Schottky rectifier

Description This dual center tab Schottky rectifier is suited for high frequency switched mode power supplies. Features  High junction temperature capability  Good trade off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  ECOPA

文件：293.97 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PS10170CB；Package：DPAK；High voltage power Schottky rectifier

Description This dual center tab Schottky rectifier is suited for high frequency switched mode power supplies. Features  High junction temperature capability  Good trade off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  ECOPA

文件：293.97 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Coaxial Isolators

Features: * High Power * High Isolation * Low Insertion Loss * Low VSWR Applications: * Wireless * Radar * Laboratory Test

文件：170.36 Kbytes 页数：2 Pages

QUALWAVE

扩维微波

5.7 – 7 GHz 50 Watt GaN Power Amplifier

Product Overview Qorvo's QPA1017D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). The QPA1017D operates from 5.7 – 7.0 GHz, provides 50 W of saturated output power with 21 dB of large signal gain and greater than 40% power–added effici

文件：1.03795 Mbytes 页数：29 Pages

QORVO

威讯联合

5.7 – 7 GHz 50 Watt GaN Power Amplifier

Product Overview Qorvo's QPA1017D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). The QPA1017D operates from 5.7 – 7.0 GHz, provides 50 W of saturated output power with 21 dB of large signal gain and greater than 40% power–added effici

文件：1.03795 Mbytes 页数：29 Pages

QORVO

威讯联合