PSC0665H

Marking：PSC0665H；Package：DPAK；650 V, 6 A SiC Schottky diode in DPAK R2P

1.Generaldescription NexperiaintroducesleadingedgeSiliconCarbide(SiC)Schottkydiodeforultrahighperformance, lowloss,highefficiencypowerconversionapplications.TheSiCSchottkydiodeencapsulated inaReal-2-PinDPAKR2P(TO-252-2)Surface-MountedDevice(SMD)powerplasticpa

PSC0665K

Marking：PSC0665K；Package：TO-220-2；650 V, 6 A SiC Schottky diode in TO-220-2 R2P

1.Generaldescription NexperiaintroducesleadingedgeSiliconCarbide(SiC)Schottkydiodeforultra-highperformance, lowloss,highefficiencypowerconversionapplications.TheSiCSchottkydiodeisencapsulatedin aReal-2-Pin(R2P)TO-220-2through-holepowerplasticpackage.Theproduct

PSC1065K

Marking：PSC1065K；Package：TO-220-2；650 V, 10 A SiC Schottky diode in TO-220-2 R2P

1.Generaldescription NexperiaintroducesleadingedgeSiliconCarbide(SiC)Schottkydiodeforultra-highperformance, lowloss,highefficiencypowerconversionapplications.TheSiCSchottkydiodeisencapsulated inaReal-2-Pin(R2P)TO-220-2(SOT8021)through-holepowerplasticpackage.T

PSMN013-100BS

Marking：PSMN013-100BS；Package：SOT404；N-channel 100V 13.9mΩ standard level MOSFET in D2PAK

1.Generaldescription StandardlevelN-channelMOSFETinD2PAKpackagequalifiedto175C.Thisproduct isdesignedandqualifiedforuseinawiderangeofindustrial,communicationsand domesticequipment. 2.Featuresandbenefits •Highefficiencyduetolowswitchingandconductionlosses

PSMN013-100PS

Marking：PSMN013-100PS；Package：SOT78；N-channel 100V 13.9mΩ standard level MOSFET in TO220.

1.1Generaldescription StandardlevelN-channelMOSFETinTO220packagequalifiedto175C.Thisproduct isdesignedandqualifiedforuseinawiderangeofindustrial,communicationsand domesticequipment. 1.2Featuresandbenefits •Highefficiencyduetolowswitchingandconductionloss

PSMN022-30BL

Marking：PSMN022-30BL；Package：SOT404；N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK

1.1Generaldescription LogiclevelN-channelMOSFETinD2PAKpackagequalifiedto175°C.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits Highefficiencyduetolowswitching andconductionloss

PSMN057-200B

Marking：PSMN057；Package：SOT404；N-channel TrenchMOS SiliconMAX standard level FET

1.Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)ina plasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 2.Featuresandben

PSMN057-200P

Marking：PSMN057；Package：SOT78；N-channel TrenchMOS SiliconMAX standard level FET

1.Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)ina plasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 2.Featuresandben

PSMN1R5-40PS

Marking：PSMN1R5-40PS；Package：SOT78；N-channel 40 V 1.6 mΩ standard level MOSFET in TO220

1.Generaldescription StandardlevelN-channelMOSFETinSOT78(TO220)usingTrenchMOStechnology. Productdesignandmanufacturehasbeenoptimizedforuseinbatteryoperatedpower tools. 2.Featuresandbenefits •Highefficiencyduetolowswitchingandconductionlosses •Robustconstr

PSMN1R6-30BL

Marking：PSMN1R6-30BL；Package：SOT404；N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK

1.1Generaldescription LogiclevelN-channelMOSFETinD2PAKpackagequalifiedto175°C.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits Highefficiencyduetolowswitching andconductionloss