UHF wideband transistor

DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. FEATURES

文件：109.36 Kbytes 页数：16 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise NF = 1.5 dB TYP., @VCE = 6V, IC = 30 mA, f = 1 GHz • High Gain ︱ S21e︱ 2 = 12 dB TYP. @VCE = 6V, IC = 30 mA, f = 1.0 GHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for VHF, UHF low noise ampl

文件：306.43 Kbytes 页数：2 Pages

ISC

无锡固电

NPN UHF宽频带晶体管

NPN晶体管，采用表面贴装3针SOT323封装。该晶体管主要设计用于RF前端GHz范围内的宽带应用，比如模拟和数字移动电话、无绳电话、雷达探测器、传呼机和卫星电视调谐器。 金属化镀金确保极佳的可靠性\n高增益\n低失真\n低噪声\n小型封装;

恩XP

UHF wideband transistor

文件：122.34 Kbytes 页数：16 Pages

JMNIC

锦美电子