包装：散装 类别：标签，标志，护栏，标识 标签，贴纸，贴标 - 预印 描述：LABEL 12\

PANDUIT

General-Purpose Switching Device Applications

N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 1.8V drive. • Halogen free compliance.

文件：288.6 Kbytes 页数：4 Pages

SANYO

三洋

Single N-Channel Power MOSFET

This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features •

文件：524.22 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET

This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features •

文件：524.22 Kbytes 页数：5 Pages

ONSEMI

安森美半导体