SI2300

N-ChannelEnhancementModeFieldEffectTransistor

Features VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0A VDS=20V,,RDS(ON)=75m@VGS=1.8V,ID=1.0A

SI2300

N-ChannelEnhancementModeMOSFET

Feature ●20V/6A,RDS(ON)=35mΩ(MAX)@VGS=4.5V. RDS(ON)=45mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SC-59forSurfaceMountPackage. Applications ●LI-IONProtectionCircuit

SI2300A

N-Channel20-V(D-S)MOSFET

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter

SI2300A

N-Channel20-V(D-S)MOSFET

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter

SI2300DS

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverterforPortableDevices •LoadSwitch

SI2300DS

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverterforPortableDevices •LoadSwitch

SI2300DS

N-Channel30-V(D-S)MOSFET

SI2300DS

N-Channel30V(D-S)MOSFET

SI2300DS

30VN-ChannelEnhancementModeMOSFET

Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologySi2300DS GeneralFeatures VDS=30VID=4.2A RDS(ON)

SI2300DS

30VN-ChannelMOSFET

Application «DC/DCConverter «Portableequipmentandbattery LoadSwitch