OPAx992-Q1 Automotive, 40-V Rail-to-Rail Input or Output, Low Offset Voltage, Low Noise Op Amp

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2A – Device CDM ESD classification level C6 • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 7 nV/√Hz at 1 kHz, 4.4

文件：2.75279 Mbytes 页数：51 Pages

TI

德州仪器

OPAx992-Q1 Automotive, 40-V Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2A – Device CDM ESD classification level C6 • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 7 nV/√Hz at 1 kHz, 4.4

文件：2.59826 Mbytes 页数：48 Pages

TI

德州仪器

OPAx992-Q1 Automotive, 40-V Rail-to-Rail Input or Output, Low Offset Voltage, Low Noise Op Amp

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2A – Device CDM ESD classification level C6 • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 7 nV/√Hz at 1 kHz, 4.4

文件：2.68134 Mbytes 页数：50 Pages

TI

德州仪器

OPAx992-Q1 Automotive, 40-V Rail-to-Rail Input or Output, Low Offset Voltage, Low Noise Op Amp

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2A – Device CDM ESD classification level C6 • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 7 nV/√Hz at 1 kHz, 4.4

文件：2.60129 Mbytes 页数：48 Pages

TI

德州仪器

OPAx992-Q1 Automotive, 40-V Rail-to-Rail Input or Output, Low Offset Voltage, Low Noise Op Amp

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2A – Device CDM ESD classification level C6 • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 7 nV/√Hz at 1 kHz, 4.4

文件：2.75262 Mbytes 页数：51 Pages

TI

德州仪器

OPA4H838-SEP Precision, Zero-Drift, Zero-Crossover, True Rail-to-Rail Input/Output Operational Amplifiers

1 Features • Radiation tolerant – Single Event Latch-up (SEL) immune to 43MeV-cm2/mg at 125°C – ELDRS free to 30krad(Si) – Total Ionizing Dose (TID) RLAT for every wafer lot up to 30krad(Si) • Supports Defense and Aerospace Applications – Controlled baseline – One fabrication, assembly, a

文件：1.10456 Mbytes 页数：22 Pages

TI

德州仪器

OPAx596 High-Voltage (85V), Low-Power (420μA), High-Slew Rate (100V/μs) Power Amplifier With Mux-Friendly Inputs

1 Features • High slew rate: 100V/μs • Low power consumption: 420μA • Wide power-supply range: – ±4V to ±42.5V – 8V to 85V • Mux-friendly inputs • Rail-to-rail input and out • Gain bandwidth: 3.75MHz • Low noise: 12.8nV/√Hz • Low input bias current: 5pA • High-output load drive: IO ±30m

文件：1.37674 Mbytes 页数：27 Pages

TI

德州仪器

OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V, JFET-Input Operational Amplifiers

1 Features • Low input voltage noise density: 4 nV/√Hz at 1 kHz • Input voltage noise: 0.1 Hz to 10 Hz: 60 nVRMS • Low input bias current: – 0.1 pA (DGN) – 1 pA (D) • Input offset voltage: – 25 μV (DGN) – 50 μV (D) • Input offset drift: – 0.2 μV/°C (DGN) – 0.45 μV/°C (D) • MUX-friend

文件：3.10746 Mbytes 页数：47 Pages

TI

德州仪器

OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V JFET-Input, Operational Amplifiers

1 Features • Low input voltage noise density: 4 nV/√Hz at 1 kHz • Input voltage noise: 0.1 Hz to 10 Hz: 60 nVRMS • Low input bias current: 1 pA • Input offset voltage: 50 μV • Input offset drift: 0.45 μV/°C • MUX-friendly inputs • Gain bandwidth: 45 MHz • Slew rate: 150 V/μs • 14-bit se

文件：2.34601 Mbytes 页数：43 Pages

TI

德州仪器

OPA928 16-V, Femtoampere Input Bias, Precision, Rail-to-Rail Input/Output, e-trim™ Operational Amplifier

1 Features • Ultra-low input bias current: – 20 fA (tested max) at 25ºC and 85ºC • Low noise: – 0.05 fA/√Hz at 0.1 Hz – 15 nV/√Hz at 1 kHz • High dc precision: – ±5 μV input offset voltage – ±0.1 μV/°C offset voltage drift • Wide bandwidth: 2.5-MHz GBW • Low quiescent current: 275 μA •

文件：1.41463 Mbytes 页数：24 Pages

TI

德州仪器