U1701B

ForElectronic,ElectricalandIndustrialProcessTesting

Features ––Extendedmeasurementdistanceofupto100meters ––Viewreadingsofuptofourhandheldmeterssimultaneously ––CompatibleacrossallexistingKeysightU1200serieshandheldmeters ––60,000pointsintervallogging* ––DownloadloggeddatatoaPCviaBluetoothconnection* ––Micro

U1701B

AgilentU1701BHandheldCapacitanceMeter

UC1701

Single-Chip,Ultra-LowPower65COMby132SEGPassiveMatrixLCDController-Driver

UC1701cGAB

Single-Chip,Ultra-LowPower65COMby132SEGPassiveMatrixLCDController-Driver

UC1701cGBB

Single-Chip,Ultra-LowPower65COMby132SEGPassiveMatrixLCDController-Driver

UCS1701S

HIGHPERFORMANCECURRENTMODEPOWERSWITCH

UPA1701

MOSFieldEffectPowerTransistors

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnote bookcomputers,andLi-ionbatteryapplications. FEATURES •2.5VGateDriveandLowOn-Resistance RDS(on)1=27mWMax.(V

UPA1701A

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsandLi-ionbatteryapplication. FEATURES •2.5Vgatedriveandlowon-resistance RDS(on)1=27mΩ(MAX.)(VGS=4.0V,ID=3.5A) RDS(on)2=40mΩ(MAX.)(VGS=2.5V,ID=3

UPA1701A

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION TheμPA1701AisN-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsandLi-ion batteryapplication. FEATURES •2.5Vgatedriveandlowon-resistance RDS(on)1=27mΩ(MAX.)(VGS=4.0V,ID=3.5A

UPA1701AG

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION TheμPA1701AisN-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsandLi-ion batteryapplication. FEATURES •2.5Vgatedriveandlowon-resistance RDS(on)1=27mΩ(MAX.)(VGS=4.0V,ID=3.5A