SN54SC8T541-SEP Radiation Tolerant, Octal Buffers and Line Drivers With 3-State Outputs and Logic Level Shifter

1 Features • VID TBD • Radiation Tolerant: – Single Event Latch-Up (SEL) immune up to 43MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43MeV-cm2/mg • Wi

文件：1.25547 Mbytes 页数：27 Pages

TI

德州仪器

SN54SC8T541-SEP Radiation Tolerant, Octal Buffers and Line Drivers With 3-State Outputs and Logic Level Shifter

1 Features • Vendor item drawing available, VID V62/25632-01XE • Radiation - Total Ionizing Dose (TID): – TID characterized up to 50krad(Si) – TID performance assurance up to 30krad(Si) – Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si) • Radiation - Single-Even

文件：1.1293 Mbytes 页数：27 Pages

TI

德州仪器

SN54SC8T541-SEP Radiation Tolerant, Octal Buffers and Line Drivers With 3-State Outputs and Logic Level Shifter

1 Features • Vendor item drawing available, VID V62/25632-01XE • Radiation - Total Ionizing Dose (TID): – TID characterized up to 50krad(Si) – TID performance assurance up to 30krad(Si) – Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si) • Radiation - Single-Even

文件：1.1293 Mbytes 页数：27 Pages

TI

德州仪器

SN54SC8T541-SEP Radiation Tolerant, Octal Buffers and Line Drivers With 3-State Outputs and Logic Level Shifter

1 Features • Vendor item drawing available, VID V62/25632-01XE • Radiation - Total Ionizing Dose (TID): – TID characterized up to 50krad(Si) – TID performance assurance up to 30krad(Si) – Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si) • Radiation - Single-Even

文件：1.1293 Mbytes 页数：27 Pages

TI

德州仪器

SN54SC8T541-SEP Radiation Tolerant, Octal Buffers and Line Drivers With 3-State Outputs and Logic Level Shifter

1 Features • VID TBD • Radiation Tolerant: – Single Event Latch-Up (SEL) immune up to 43MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43MeV-cm2/mg • Wi

文件：1.25547 Mbytes 页数：27 Pages

TI

德州仪器