TrenchMOS ultra low level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN34UN in SOT457 (TSOP6). Features ■ TrenchMOS™ technology ■ Very fast switching ■ Low threshold voltage ■ Surface mount package. Applications ■ Batt

文件：234.72 Kbytes 页数：12 Pages

PHI

飞利浦

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：477.69 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

mTrenchMOS™ ultra low level FET

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN34UN in SOT457 (TSOP6). 2. Features n TrenchMOS™ technology n Very fast switching n Low threshold voltage n Surface mount package. 3. Applications

文件：338.95 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel TrenchMOS ultra low level FET

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世