N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：474.97 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

TrenchMOS™ ultra low level FET

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN27UN in SOT457 (TSOP6). 2. Features n TrenchMOS™ technology n Very fast switching n Low threshold voltage n Surface mount package. 3. Applications

文件：342.41 Kbytes 页数：13 Pages

NEXPERIA

安世

TrenchMOS ultra low level FET

文件：237.88 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS ultra low level FET

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

TrenchMOS ultra low level FET

恩XP