N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：475.1 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

mTrenchMOS™ ultra low level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n TrenchMOS™ technology n Low threshold voltage n Very fast switching n Surface mounted package. n Battery powered motor control n Load switch i

文件：208.08 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

UTrenchMOS ultra low level FET

文件：89.84 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS ultra low level FET

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世