N-channel mTrenchMOS™ extremely low level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n Surface mounted package n Footprint 40 smaller than SOT23 n Low on-state resistance n Low threshold voltage. n Driver circuits n Switching in

文件：205.77 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel mTrenchMOS extremely low level FET

文件：87.4 Kbytes 页数：12 Pages

PHI

PHI

N-Channel 30 V (D-S) MOSFET

文件：1.00867 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS extremely low level FET

Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

MOSFET N-CH 30V 0.96A 6TSSOP

恩XP