PMV130ENEA

40V,N-channelTrenchMOSFET

PMZ130UNE

20V,N-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006-3(SOT883)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •Veryfastswitching •Lowthresholdvoltage •TrenchMOSFETte

PPTC130V

PolymerPTCResettable130VSeries

PSE130

PSE130Series83-130WattsSwitchModeUniversalACInput

Features •Single&dualoutputversions •Optionaloutputconnectors •100%burnin •Wideinputvoltagerangeof90-264VAC •InputSurgeCurrentProtection •OvervoltageProtection •OvercurrentProtection •InputconformswithEN1000-3-2PowerFactorCorrection

PSUH130

ThreePhaseACControllerModules

PSUT130

ThreePhaseACControllerModules

PTX130R

NFCReaderICPTX130R

Features Thearchitectureenables: •Efficientpowertransmissionwithaccurate digitalprogrammabilityofRFcarrierand modulationshape •EMCfilterremovalduetosinewaveoutput driverandDirectAntennaConnection(DiRAC) •-80dBcRXsensitivitywithfulldynamicrange duetoDiRAC

PUP130

60-130WATTDESKTOPPOWERADAPTERS

PV130-CFX

SSD(Solid-StateDisk)

PWB130A

THYRISTORMODULE(NON-ISOLATEDTYPE)

PWB130AisaThyristormodulesuitableforlowvoltage,3phaserecifierapplicatio 1.IT(AV)130A(eachdevice) 2.highSurgeCurrent3500A(50/60Hz) 3.EasyConstruction 4.Non-isolated.MountingbaseascommonAnodeterminal