PM39LV010-70JC中文资料512Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory数据手册PMC-Sierra规格书

描述 Description

GENERAL DESCRIPTION
The Pm39LV512/010/020/040 are 512 Kbit/1 Mbit/2 Mbit/4 Mbit 3.0 Volt-only Flash Memories. These devices are designed to use a single low voltage, range from 2.7 Volt to 3.6 Volt, power supply to perform read, erase and program operations. The 12.0 Volt VPP power supply for program and erase operations are not required. The devices can be programmed in standard EPROM programmers as well.
The memory array of Pm39LV512 is divided into uniform 4 Kbyte sectors for data or code storage. The memory arrays of Pm39LV010/020/040 are divided into uniform 4 Kbyte sectors or uniform 64 Kbyte blocks (sector group - consists of sixteen adjacent sectors). The sector or block erase feature allows users to flexibly erase a memory area as small as 4 Kbyte or as large as 64 Kbyte by one single erase operation without affecting the data in others. The chip erase feature allows the whole memory array to be erased in one single erase operation. The devices can be programmed on a byte-by-byte basis after performing the erase operation.FEATURES
• Single Power Supply Operation
- Low voltage range: 2.7 V - 3.6 V
• Memory Organization
- Pm39LV512: 64K x 8 (512 Kbit)
- Pm39LV010: 128K x 8 (1 Mbit)
- Pm39LV020: 256K x 8 (2 Mbit)
- Pm39LV040: 512K x 8 (4 Mbit)
• High Performance Read
- 55/70 ns access time
• Cost Effective Sector/Block Architecture
- Uniform 4 Kbyte sectors
- Uniform 64 Kbyte blocks (sector group - except Pm39LV512)
• Data# Polling and Toggle Bit

特性 Features

• Single Power Supply Operation
- Low voltage range: 2.7 V - 3.6 V
• Memory Organization
- Pm39LV512: 64K x 8 (512 Kbit)
- Pm39LV010: 128K x 8 (1 Mbit)
- Pm39LV020: 256K x 8 (2 Mbit)
- Pm39LV040: 512K x 8 (4 Mbit)
• High Performance Read
- 55/70 ns access time
• Cost Effective Sector/Block Architecture
- Uniform 4 Kbyte sectors
- Uniform 64 Kbyte blocks (sector group - except Pm39LV512)
• Data# Polling and Toggle Bit Features
• Hardware Data Protection
• Automatic Erase and Byte Program
- Build-in automatic program verification
- Typical 16 µs/byte programming time
- Typical 55 ms sector/block/chip erase time
• Low Power Consumption
- Typical 4 mA active read current
- Typical 8 mA program/erase current
- Typical 0.1 µA CMOS standby current
• High Product Endurance
- Guarantee 100,000 program/erase cycles per single sector (preliminary)
- Minimum 20 years data retention
• Industrial Standard Pin-out and Packaging
- 32-pin (8 mm x 14 mm) VSOP
- 32-pin PLCC
- Optional lead-free (Pb-free) package