PM200RSD060数据手册MinebeaMitsumi中文资料规格书

描述 Description

FEATURE
a) Adopting new 4th generation planar IGBT chip, which per
   formance is improved by 1µm fine rule process.
   For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
   recovery characteristics.
c) Keeping the package compatibility.
   The layout/position of both terminal pin and mounting hole
   is same as S-series 3rd generation IPM.
• 3φ 150A, 600V Current-sense IGBT for 15kHz switching
• 75A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over
   current, short-circuit, over-temperature & under-voltage
   (P-Fo available from upper leg devices)
• Acoustic noise-less 15/18.5kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
                                           File No.E80271APPLICATION
   General purpose inverter, servo drives and other motor controls