PM150CSE060中文资料三菱电机数据手册PDF规格书

FEATURE

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

For example, typical VCE(sat)=1.7V

b) Using new Diode which is designed to get soft reverse recovery characteristics.

• 3φ 150A, 600V Current-sense IGBT for 15kHz switching

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage

• Acoustic noise-less 15/18.5kW class inverter application

APPLICATION

General purpose inverter, servo drives and other motor controls