PLB16004U中文资料飞利浦数据手册PDF规格书

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with base connected to flange.

FEATURES

• Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR

• Interdigitated common-base structure provides high emitter efficiency

• Gold metallization with barrier realizes very stable characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated power and low thermal resistance

• Internal input and output prematching networks allow an easier design of circuits.

APPLICATIONS

Intended for use in common-base class C power amplifiers at 1.6 GHz.