首页 >PL2302A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DimmableBOOSTHi-PFLowTHDCCDriver FEATURE HighPForlowTHD Ultra-wideworkingvoltage Highvoltagestartstart-upandpowersupply PWM/Analogydimmingtechnology QRandMOSFETdrivertechnology Closed-loopconstantcurrentcontrol technology Singlewindinginductor Programmableoutputopen-circuit protection resist | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
HeatShrinkTubing | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
CMOSDualOperationalAmplifier | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
BROADBANDLINEARVARIABLEGAINAMPLIFIER ProductDescription TheRF2302isabroadbandlinearvariablegainamplifierthatwasdesignedspecificallyfordigitalcommunicationssystemsthatrequirelinearamplificationoverawidegaincontrolrange.ItissuitableforuseinCDMAorTDMAsystemsinthecellularorPCSband,inDAMPSsys | RFMD RF Micro Devices | RFMD | ||
BROADBANDLINEARVARIABLEGAINAMPLIFIER ProductDescription TheRF2302isabroadbandlinearvariablegainamplifierthatwasdesignedspecificallyfordigitalcommunicationssystemsthatrequirelinearamplificationoverawidegaincontrolrange.ItissuitableforuseinCDMAorTDMAsystemsinthecellularorPCSband,inDAMPSsys | RFMD RF Micro Devices | RFMD | ||
BROADBANDLINEARVARIABLEGAINAMPLIFIER ProductDescription TheRF2302isabroadbandlinearvariablegainamplifierthatwasdesignedspecificallyfordigitalcommunicationssystemsthatrequirelinearamplificationoverawidegaincontrolrange.ItissuitableforuseinCDMAorTDMAsystemsinthecellularorPCSband,inDAMPSsys | RFMD RF Micro Devices | RFMD | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModeMosfet Features TrenchFETPowerMOSFET LoadSwitchforPortableDevices. DC/DCConverter. | RECTRON Rectron Semiconductor | RECTRON | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN1301~1306 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
20VN-ChannelEnhancementModeMOSFET Features ◇Advancedtrenchprocesstechnology ◇Highdensitycelldesignforultralowon-resistance ◇Excellentthermalandelectricalcapabilities ◇CompactandlowprofileSOT-23package | SIRECTSirectifier Global Corp. 矽莱克半导体深圳市矽莱克半导体有限公司 | SIRECT |
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