Glass passiated junction

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SPSEMI

瞬雷电子

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR: 6.8 - 440 Volts PPK: 400 Watts FEATURES : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V

文件：28.18 Kbytes 页数：4 Pages

EIC

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. FEATURES: • Common Emitter • PG = 6.0 dB at 30 W/225 MHz • Omnigold™ Metalization System • Emitter Ballasting

文件：17.85 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. FEATURES: • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold™ Metalization System • Emitter Ballasting

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ASI