N-Channel Enhancement Mode Field Effect Transistor

文件：238.03 Kbytes 页数：6 Pages

NIKOSEM

尼克森

Power MOSFET

NIKO-SEM

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文件：395.52 Kbytes 页数：3 Pages

APEX-ELECTRONICS

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：112.07 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：111.43 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司