20V Complementary Enhancement Mode MOSFET – ESD Protected

Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

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High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

文件：101.96 Kbytes 页数：5 Pages

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SOT563

PANJIT/强茂

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