丝印：Q5572A；Package：DFN5060-8L；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：478.55 Kbytes 页数：6 Pages

PANJIT

強茂

中压MOSFET(60 - 200V , Rds(on) < 1Ω)

PANJIT’s PJQ5572A-AU 100V Medium-Voltage MOSFET masterfully combines SGT and N-channel technology within the slim DFN5060-8L package. This MOSFET stands out for its efficiency and compact size, making it perfectly suited for the demanding conditions of automotive applications. It's designed to suppo • Excellent FOM\n• Logic Level Drive\n• AEC-Q101 Qualified\n• Lead free in compliance with EU RoHS 2.0\n• Green molding compound as per IEC 61249 standard;

Panjit

強茂

11 watt; A19 Compact Fluorescent; 2700K; 82 CRI; Medium base; 120 volts

文件：123.68 Kbytes 页数：1 Pages

SATCO

5-V, Zero-Drift, RRIO, 15-MHz, Precision Operational Amplifier

Features • Supply Voltage: 2.7 V to 5.5 V or Dual Supply: ±1.35 V to ±2.75 V • Low Offset Voltage: ±150 μV Maximum • Zero Drift: ±0.01 μV/°C • Rail-to-Rail Input and Output • Gain Bandwidth Product: 15 MHz • Slew Rate: 5 V/μs • Low Noise: 10 nV/√Hz at 1 kHz • AEC-Q100 Qualified for Automo

文件：2.26445 Mbytes 页数：24 Pages

3PEAK

思瑞浦