丝印：Q5562A；Package：DFN5060-8L；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：478.77 Kbytes 页数：6 Pages

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丝印：Q5562A；Package：DFN5060-8L；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：477.87 Kbytes 页数：6 Pages

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中压MOSFET(60 - 200V , Rds(on) < 1Ω)

PJQ5562A is a 60V N-Channel Enhancement Mode MOSFET, optimized to have excellent FOM and low Rdson. Designed with logic level gate drive in a DFN5060-8L Package. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0. ● RDS(ON), VGS@10V,ID@20ADS(ON), VGS@4.5V,ID@10A;

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中压MOSFET(60 - 200V , Rds(on) < 1Ω)

PJQ5562A-AU is a 60V N-Channel Enhancement Mode MOSFET, optimized to have excellent FOM and AEC-Q101 qualified. Designed with logic level gate drive in a DFN5060-8L Package. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0. ● RDS(ON), VGS@10V, ID@20ADS(ON), VGS@4.5V, ID@10A;

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