丝印：PJM；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 9V 3000W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：4.23189 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：PJM；Package：DO-214AB；Surface Mount Transient Voltage Suppressors (TVS)

文件：1.68763 Mbytes 页数：7 Pages

SOCAY

硕凯股份

丝印：130N65EC；Package：TO-263；650V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 130mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-263 package  Terminals: So

文件：776.99 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：210N65EC；Package：TO-263；650VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:210mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-263package Terminals:SolderableperMIL-STD-750,Method2026 Approx.W

文件：1.18556 Mbytes 页数：7 Pages

PANJIT

強茂

丝印：310N65EC；Package：TO-263；650VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:310mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-263package Terminals:SolderableperMIL-STD-750,Method2026 Approx.W

文件：1.18439 Mbytes 页数：7 Pages

PANJIT

強茂

丝印：390N65EC；Package：TO-263；650V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 390mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-263 package  Terminals: So

文件：772.65 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：360N60EC；Package：TO-252AA；600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 360mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-252AA package  Terminals:

文件：542.42 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：390N65EC；Package：TO-252AA；650V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 390mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-252AA package  Terminals:

文件：541.58 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：600N65E1；Package：TO-252AA；650V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 600mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-252AA package  Terminals: So

文件：637.98 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：900N60EC；Package：TO-252AA；600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 900mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-252AA package  Terminals: So

文件：541.81 Kbytes 页数：7 Pages

PANJIT

強茂