800V N-Channel MOSFETs

Features - 800V,17A, RDS(ON) =275mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - Green Device Available - PFC Power Supply Stages - DC-DC Converters - Adapter Applications - Motor Control

文件：984.51 Kbytes 页数：5 Pages

POTENS

博盛半导体

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

文件：175.57 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET With Fast Body Diode

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

文件：157.19 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.29Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators

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ISC

无锡固电