PJD50N10L

100V N-Channel Enhancement Mode MOSFET

PJD50N10SA-AU

100VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

PJU50N10L

100VN-ChannelEnhancementModeMOSFET

SSD50N10

N-ChEnhancementModePowerMOSFET

SSD50N10

N-Channel100-V(D-S)MOSFET

SSE50N10-C

N-ChEnhancementModePowerMOSFET

SSH50N10

N-ChannelMOSFETusesadvancedtrenchtechnology

SSU50N10

54A,100V,RDS(ON)22m
N-ChEnhancementModePowerMOSFET

STW50N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.035Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STW50N10

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.027Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURREN