丝印：45N06SA；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：476.46 Kbytes 页数：6 Pages

PANJIT

強茂

中压MOSFET(60 - 200V , Rds(on) < 1Ω)

PJD45N06SA-AU is a 60V N-Channel Enhancement Mode MOSFET, optimized to have excellent FOM and AEC-Q101 qualified with logic level gate drive. Specifically designed with an extremely efficient and reliable device for use in Automotive in a TO-252AA Package. The product features green molding compound ● RDS(ON), VGS, ID@20ADS(ON), VGS, ID@10A;

Panjit

強茂

60V N-Channel Enhancement Mode MOSFET

文件：451.95 Kbytes 页数：8 Pages

PANJIT

強茂

45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：73.85 Kbytes 页数：8 Pages

Intersil

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：82.12 Kbytes 页数：6 Pages

Fairchild

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