60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@200mA

文件：311.24 Kbytes 页数：6 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@200mA

文件：310.16 Kbytes 页数：6 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@160mA

文件：362.17 Kbytes 页数：6 Pages

PANJIT

強茂

MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features • Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space • HBM Class 0A, MM Class M1A, CDM Class IV (Note 3) • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Co

文件：265.56 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@250mA

文件：318.09 Kbytes 页数：6 Pages

PANJIT

強茂