20V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@4.5V, ID@2.0A

文件：659.4 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：A30；Package：SOT-23；20V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@4.5V, ID@2.0A

文件：659.4 Kbytes 页数：6 Pages

PANJIT

強茂

低压MOSFET (20 - 40V , RDS(ON) < 1Ω)

Panjit

強茂

IC for CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

文件：89.77 Kbytes 页数：9 Pages

MITSUMI

三美

CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

文件：177.66 Kbytes 页数：9 Pages

MITSUMI

三美

Low-Drift, Low-Power, Small-Footprint Series Voltage Reference

文件：1.05594 Mbytes 页数：26 Pages

TI

德州仪器