PJA3424E

30V N-Channel Enhancement Mode MOSFET– ESD Protected

Features RDS(ON),VGS@10V,ID@4.2A

PJA3424E_R1_00001

Marking：24E；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET– ESD Protected

Features RDS(ON),VGS@10V,ID@4.2A

PLP-3424

LOWPROFILEDUALBOBBINHIGHISOLATIONPOWERTRANSFORMERS

PST3424

ICforCMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

PST3424

CMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

SC3424

8-DIGITCALCULATOR

DESCRIPTION TheSC3423isasingle-chipLSICMOScalculatorwith8-digitfourfunctionarithmeticoperations,singlememory,extractionofsquarerootandpercentagecalculationfunctions,leadingzeroandtrailingzerosuppression,chaincalculationsandinternaldebouncingandencodingofkeybo

SI3424BDV

N-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested •Materialcategorization: Fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •LoadSwitchforPortableDevices

SI3424BDV

N-Channel30-V(D-S)MOSFET

SI3424CDV

N-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableDevices •DC/DCConverters

SI3424CDV

N-Channel30V(D-S)MOSFET