2N3906

PNPSiliconTransistor(GeneralsmallsignalapplicationSwitchingapplication)

Descriptions 1.Generalsmallsignalapplication 2.Switchingapplication Features 1.Lowcollectorsaturationvoltage 2.Collectoroutputcapacitance 3.Complementarypairwith2N3904

2N3906

PNPGeneralPurposeAmplifier

Features ●LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ●Capableof600mWofPowerDisspationand200mAIc ●EpoxymeetsUL94V-0flammabilityrating ●MoisureSensitivityLevel1 ●ThroughHolePackage ●Marking:Typenumber

2N3906

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=-50nA(Max.),IBL=-50nA(Max.) @VCE=-30V,VEB=-3V. •ExcellentDCCurrentGainLinearity •LowSaturationVoltage :VCE(sat)=-0.4V(Max.)@IC=-50mA,IB=-5mA. •LowCollectorOutputCa

2N3906

SMALLSIGNALTRANSISTORSPNP

FEATURES ♦PNPSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. ♦Ascomplementarytype,theNPNtransistor2N3904isrecommended. ♦Onspecialrequest,thistransistorisalsomanufacturedinthepinconfigurationTO-18. ♦Thistransistorisalsoavailableinthe

2N3906

GeneralPurposeTransistors

2N3906

PNPGeneralPurposeTransistors

PNPGeneralPurposeTransistors

2N3906

PNPGeneralPurposeAmplifier

2N3906

EPITAXIALPLANARPNPTRANSISTOR

2N3906

PNPGeneralPurposeTransistor

2N3906

PNPEPITAXIALPLANARTRANSISTOR

Description The2N3906isdesignedforgeneralpurposeswitchingandamplifierapplications.