isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 110V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：318.92 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET N-CH 110V 20.8A SOT186A

恩XP

恩智浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 27A@ TC=25℃ ·Drain Source Voltage -VDSS= 110V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.7 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

文件：774 Kbytes 页数：13 Pages

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