N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode po

文件：95.84 Kbytes 页数：7 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：359.31 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

恩XP

SOP8

CHIP-RAIL启臣微

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