PHPT610035PK-Q中文资料安世数据手册PDF规格书

厂商型号	PHPT610035PK-Q
功能描述	PNP/PNP matched high power double bipolar transistor
丝印标识	10035PK
封装外壳	SOT1205
文件大小	281.19 Kbytes
页面数量	14 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-25 22:59:00
人工找货	PHPT610035PK-Q价格和库存，欢迎联系客服免费人工找货

1. General description

PNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D) Surface-

Mounted Device (SMD) power plastic package. Matched version of PHPT610030PK-Q.

NPN/NPN complement: PHPT610035NK-Q.

2. Features and benefits

• Current gain matching 10 %

• High thermal power dissipation capability

• Suitable for high temperature applications up to 175 °C

• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

• High energy efficiency due to less heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Current mirror

• Motor control

• Power management

• Backlighting applications

• Relay replacement

• Differential amplifiers