首页 >PHP3055E其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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PowerMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePo | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopewithanelectricallyisolatedmountingtab.Thedeviceuses’trench’technologytoachievelowon-stateresistance. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching • | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticfull-packenvelope.Thedevicefeatureshighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforus | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.4A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF | ||
MicroelectronicPowerICHEXFET짰PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF | ||
MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF | ||
MicroelectronicPowerICHEXFET짰PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF | ||
100WS-BandGaNPowerAmplifier | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO |
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