N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). Features ■ Fast switching ■ Very low on-state resistance. Applications ■ Genera

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PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.33 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET N-CH 55V 75A TO220AB

恩XP

Planar Lightwave Circuit Splitters

文件：189.7 Kbytes 页数：2 Pages

OPLINK

Planar Lightwave Circuit Splitters

文件：189.7 Kbytes 页数：2 Pages

OPLINK

N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. FEATURES • High-speed switching • Interchangeability of drain and source connections

文件：36.52 Kbytes 页数：6 Pages

PHI

PHI