N-channel TrenchMOS logic level FET

Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Logic level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC

文件：91.26 Kbytes 页数：13 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.56 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

文件：337.91 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS™ logic level FET

Description\nLogic level N-channel enhancement mode field-effect transistor in a plastic package\nusing TrenchMOS™ technology. ■ Logic level threshold\n■ Very low on-state resistance.Applications\n■ Motors, lamps, solenoids\n■ Uninterruptible power supplies\n■ DC-to-DC converters\n■ General industrial applications.Quick reference data\n■ VDS ≤ 75 V\n■ ID ≤ 75 A\n■ Ptot ≤ 230 W\n■ RDSon ≤ 8.5 mΩ.;

恩XP

N-channel TrenchMOS standard level FET

恩XP