N-channel TrenchMOS transistor

VDSS = 200 V ID = 5.2 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control

文件：113.3 Kbytes 页数：9 Pages

PHI

飞利浦

N-channel TrenchMOS transistor

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恩智浦

N-channel TrenchMOS transistor

VDSS = 200 V ID = 5.2 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control

文件：113.3 Kbytes 页数：9 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.15 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS™ transistor

VDSS = 200 V\nID = 5.2 A\nRDS(ON) ≤ 400 mΩGENERAL DESCRIPTION\nN-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and g • ’Trench’ technology\n• Low on-state resistance\n• Fast switching\n• Low thermal resistance;

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恩智浦