Radar Pulsed Power Transistor 30W, 3.1-3.5 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：107.81 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor, 3OW, IOOms Pulse, 10 Duty 3.1 - 3.5 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Effkiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic Pa

文件：152.62 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 30W, 3.1-3.5 GHz, 100μs Pulse, 10% Duty

MACOM

SOT-669

恩XP

上传：深圳市中联芯电子有限公司

DIP-32

PHOEBUS

上传：深圳市赛尔通科技有限公司