Radar Pulsed Power Transistor 135W, 2.9-3.1 GHz, 20關s Pulse, 1 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

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MA-COM

REDAR PULSED POWER TRANSISTOR, 135W, 20us PULSE, 1 PERCENTAGE DUTY 2.9 - 3.1 GHz

文件：136.9 Kbytes 页数：2 Pages

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Radar Pulsed Power Transistor 135W, 2.9-3.1 GHz, 20μs Pulse, 1% Duty

MACOM

DIP-32

SST

Silicon Storage Technology, Inc

上传：飞利飞科技有限公司

模块

LAMBDA

电盛兰达

上传：深圳市恒达亿科技有限公司