丝印：PGs；Package：SOT-363；BGA428 High Gain, Low Noise Amplifier

Silicon Germanium Broadband MMIC Amplifier Feature • High gain, GMA = 20 dB at 1.8 GHz • Low noise figure, NF = 1.4 dB at 1.8 GHz • Prematched • Ideal for GSM, DCS1800, PCS1900 • Open collector output • Typical supply voltage: 2.4 - 3 V • SIEGET®-45 technology • Pb-free (RoHS compliant) p

文件：482.87 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：PGS；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 9V 3000W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：4.23189 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：PGs；Package：SOT-363；Gain and PCS Low Noise Amplifier

文件：399.52 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：PGs；Package：SOT-363；Gain and PCS Low Noise Amplifier

文件：347.39 Kbytes 页数：11 Pages

Infineon

英飞凌

GAGE PRESSURE TRANSMITTER

PRODUCT DESCRIPTION The PGS100A is a compact gage pressure transmitter complete with a 2 wire 4-20 mA output, various pressure ranges, 1/4” NPT connection and 2’ cable for electrical termination.

文件：136.67 Kbytes 页数：1 Pages

GREYSTONE

Low profile package

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very

文件：615.85 Kbytes 页数：4 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

Low profile package

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very

文件：615.85 Kbytes 页数：4 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

Low profile package

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very

文件：615.85 Kbytes 页数：4 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

Low profile package

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very

文件：615.85 Kbytes 页数：4 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

Low profile package

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very

文件：615.85 Kbytes 页数：4 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司