零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
I2000RUSERIES | MPD MPD (Memory Protection Devices) | MPD | ||
10/100/1000/2.5GBASE?밫MAGNETICSMODULES | BOTHHAND Bothhand USA | BOTHHAND | ||
DIRECTQUADRATUREMODULATOR1450MHzTO2700MHz | RFMD RF Micro Devices | RFMD | ||
DIRECTQUADRATUREMODULATOR1450MHzTO2700MHz | RFMD RF Micro Devices | RFMD | ||
DIRECTQUADRATUREMODULATOR1450MHzTO2700MHz | RFMD RF Micro Devices | RFMD | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOMRecom International Power 瑞科电源瑞科电源有限公司 | RECOM | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOMRecom International Power 瑞科电源瑞科电源有限公司 | RECOM | ||
3phiRoundWideViewingAngleLEDs 3φRoundWideViewingAngleLEDs | SankenSanken Electric Co Ltd. 三垦日本三垦 | Sanken | ||
ShieldedPowerInductor??SER2000 | COILCRAFTCoilcraft 线艺 | COILCRAFT | ||
HighEnergyNPNTransistor 200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve | SSDI SSDI | SSDI | ||
200AMP100-140VOLTSNPNTRANSISTOR 200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage | SSDI SSDI | SSDI | ||
HIGHENERCYNPNTRANSISTOR [SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
LowPower,LowDropout,250mA,RF-LinearRegulators GENERALDESCRIPTION TheSGM2014serieslow-power,low-noise,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto250mA.Theyaretheperfectchoiceforlowvoltage,lowpowerapplications. FEATURES -LowOutputNoise:30µVRMSTYP(10Hzto100kHz) -Ul | SGMICROSG Micro Corp 圣邦圣邦微电子(北京)股份有限公司 | SGMICRO | ||
GaAsN-channelDualGateMESFET? Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Lowvoltageoperation •Lownoise:NF=1.5dB(typ.)at900MHz • | SonySONY 索尼 | Sony | ||
GaAsN-channelDualGateMESFET Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Lowvoltageoperation •Lownoise:NF=1.5dB(typ.)at900MHz • | SonySONY 索尼 | Sony | ||
GaAsN-channelDualGateMESFET Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Ultrasmallpackage •Lowvoltageoperation •Lownoise:NF=1. | SonySONY 索尼 | Sony |
详细参数
- 型号:
PG2014
- 功能描述:
2 AMP/NPN-PNP Pirgo silicon planar power transistors
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
N/A |
D/C09 |
10000 |
询价 | ||||
WISE |
22+ |
SOP-8 |
17483 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
WISE |
23+ |
SOP-8 |
89630 |
当天发货全新原装现货 |
询价 | ||
22+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
询价 | |||
2318+ |
DIP |
4862 |
只做进口原装!假一赔百!自己库存价优! |
询价 | |||
PANJIT |
20+ |
DO-15 |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Panjit International Inc. |
24+ |
DO-15 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
SUNMATE(森美特) |
2019+ROHS |
DO-15 |
66688 |
森美特高品质产品原装正品免费送样 |
询价 | ||
BILIN |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
MDD |
21+ |
DO-15 |
12588 |
原装正品,价格优势 |
询价 |
相关规格书
更多- PG2015
- PG2017
- PG201R
- PG2020
- PG2022
- PG2024
- PG2026
- PG2028
- PG202R
- PG202R_ R2 _10001
- PG2030
- PG2032
- PG2034
- PG2036
- PG204R
- PG2050
- PG2052
- PG2054
- PG2056
- PG2058
- PG206
- PG2061
- PG2063
- PG2065
- PG2067
- PG2069
- PG207
- PG2071
- PG2073
- PG2075
- PG2077
- PG2079
- PG208 _AY _10001
- PG2080
- PG2082
- PG2084
- PG208R
- PG20L-D20-HHC0
- PG21-2X8
- PG21-3/4
- PG21-4X7.5
- PG21-BP
- PG21-M25
- PG2203
- PG2204
相关库存
更多- PG2016
- PG2019
- PG202
- PG2021
- PG2023
- PG2025
- PG2027
- PG2029
- PG202R _AY _10001
- PG203
- PG2031
- PG2033
- PG2035
- PG204
- PG205
- PG2051
- PG2053
- PG2055
- PG2057
- PG2059
- PG2060
- PG2062
- PG2064
- PG2066
- PG2068
- PG206R
- PG2070
- PG2072
- PG2074
- PG2076
- PG2078
- PG208
- PG208_ R2 _10001
- PG2081
- PG2083
- PG2085
- PG20L-020-XXXX
- PG21-2X7
- PG21-2X9
- PG21-3X8
- PG21-75
- PG21DG
- PG2202S
- PG22030
- PG2205