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I2014RU

I2000RUSERIES

MPD

MPD (Memory Protection Devices)

QVP2014

10/100/1000/2.5GBASE?밫MAGNETICSMODULES

BOTHHAND

Bothhand USA

RFMD2014

DIRECTQUADRATUREMODULATOR1450MHzTO2700MHz

RFMD

RF Micro Devices

RFMD2014SQ

DIRECTQUADRATUREMODULATOR1450MHzTO2700MHz

RFMD

RF Micro Devices

RFMD2014SR

DIRECTQUADRATUREMODULATOR1450MHzTO2700MHz

RFMD

RF Micro Devices

RSZ-2014

1WattSMDMiniatureIsolatedSingleOutput

RECOMRecom International Power

瑞科电源瑞科电源有限公司

RSZ-2014HP

1WattSMDMiniatureIsolatedSingleOutput

RECOMRecom International Power

瑞科电源瑞科电源有限公司

SEL2014

3phiRoundWideViewingAngleLEDs

3φRoundWideViewingAngleLEDs

SankenSanken Electric Co Ltd.

三垦日本三垦

SER2014

ShieldedPowerInductor??SER2000

COILCRAFTCoilcraft

线艺

SFT2014

HighEnergyNPNTransistor

200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve

SSDI

SSDI

SFT2014

200AMP100-140VOLTSNPNTRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage

SSDI

SSDI

SFT2014

HIGHENERCYNPNTRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

ETCList of Unclassifed Manufacturers

未分类制造商

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SGM2014

LowPower,LowDropout,250mA,RF-LinearRegulators

GENERALDESCRIPTION TheSGM2014serieslow-power,low-noise,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto250mA.Theyaretheperfectchoiceforlowvoltage,lowpowerapplications. FEATURES -LowOutputNoise:30µVRMSTYP(10Hzto100kHz) -Ul

SGMICROSG Micro Corp

圣邦圣邦微电子(北京)股份有限公司

SGM2014

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Lowvoltageoperation •Lownoise:NF=1.5dB(typ.)at900MHz •

SonySONY

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Lowvoltageoperation •Lownoise:NF=1.5dB(typ.)at900MHz •

SonySONY

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Ultrasmallpackage •Lowvoltageoperation •Lownoise:NF=1.

SonySONY

索尼

详细参数

  • 型号:

    PG2014

  • 功能描述:

    2 AMP/NPN-PNP Pirgo silicon planar power transistors

供应商型号品牌批号封装库存备注价格
N/A
D/C09
10000
询价
WISE
22+
SOP-8
17483
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
WISE
23+
SOP-8
89630
当天发货全新原装现货
询价
22+
长期备有现货
500000
行业低价,代理渠道
询价
2318+
DIP
4862
只做进口原装!假一赔百!自己库存价优!
询价
PANJIT
20+
DO-15
36800
原装优势主营型号-可开原型号增税票
询价
Panjit International Inc.
24+
DO-15
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
SUNMATE(森美特)
2019+ROHS
DO-15
66688
森美特高品质产品原装正品免费送样
询价
BILIN
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
MDD
21+
DO-15
12588
原装正品,价格优势
询价
更多PG2014供应商 更新时间2024-5-21 15:30:00