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PF38F5070M0Z1V0中文资料NUMONYX数据手册PDF规格书

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厂商型号

PF38F5070M0Z1V0

功能描述

StrataFlash짰 Cellular Memory

文件大小

2.1332 Mbytes

页面数量

139

生产厂商

NUMONYX

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-5 11:11:00

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PF38F5070M0Z1V0规格书详情

Introduction

This datasheet contains information about the Numonyx™ Wireless Flash Memory (W18) device family. This section describes nomenclature used in the datasheet. Section 2.0provides an overview of the W18 flash memory device. Section 6.0, Section 7.0, and Section 8.0describe the electrical specifications for extended temperature product offerings. Ordering information can be found in Section C.

Product Features

„ High Performance Read-While-Write/Erase

— Burst frequency at 66 MHz (zero wait states)

—60ns Initial access read speed

— 11 ns Burst mode read speed

— 20 ns Page mode read speed

— 4-, 8-, 16-, and Continuous-Word Burst mode reads

— Burst and Page mode reads in all Blocks, across all partition boundaries

— Burst Suspend feature

— Enhanced Factory Programming at 3.1 µs/word „

Security

—128-BitOTP Protection Register:

64 unique pre-programmed bits + 64 user-programmable bits

— Absolute Write Protection with VPP at ground

— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability„

Quality and Reliability

—Temperature Range:–40 °C to +85 °C

— 100K Erase Cycles per Block

— 90 nm ETOX™ IX Process

— 130 nm ETOX™ VIII Process

Architecture

— Multiple 4-Mbit partitions

— Dual Operation: RWW or RWE

— Parameter block size = 4-Kword

— Main block size = 32-Kword

— Top or bottom parameter devices

—16-bit wide data bus

Software

— 5 µs (typ.) Program and Erase Suspend latency time

— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible

— Programmable WAIT signal polarity

Packaging and Power

— 90 nm: 32- and 64-Mbit in VF BGA

— 130 nm: 32-, 64-, and 128-Mbit in VF BGA

— 130 nm: 128-Mbit in QUAD+ package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

—VCC= 1.70 V to 1.95 V

—VCCQ(90 nm) = 1.7 V to 1.95 V

—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V

—VCCQ(130 nm) = 1.35 V to 2.24 V

— Standby current (130 nm): 8 µA (typ.)

— Read current: 8 mA (4-word burst, typ.)

产品属性

  • 型号:

    PF38F5070M0Z1V0

  • 制造商:

    NUMONYX

  • 制造商全称:

    Numonyx B.V

  • 功能描述:

    StrataFlash㈢ Cellular Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
INTEL
24+
BGA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
INTEL/英特尔
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
INTEL/英特尔
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
INTEL/英特尔
23+
BGA
50000
全新原装正品现货,支持订货
询价
INTEL
0805+
BGA
3237
全新进口原装
询价
INTEL
24+
1936
询价
Infineon(英飞凌)
21+
BGA
311
原装现货,假一罚十
询价
NUMONYX
ROHS
56520
一级代理 原装正品假一罚十价格优势长期供货
询价
NUMONYX
24+
NA
990000
明嘉莱只做原装正品现货
询价
Micron
25+
50000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价